Magnetopolaron interactions in n-type indium phosphide
نویسندگان
چکیده
منابع مشابه
Optical field enhancement factor of Silicon and indium phosphide nano-cavities
Nano cavities based on silicon and indium phosphide materials have been comparedin this study, considering field intensity enhancement factor. The results of FDTD based simulations declare that the Si nano-cavity improves confined optical field about 7.7 times higher than the InP based nano-cavity. The introduced dielectric nano-cavities support resonance wavelength at about λ=1.55 μm.
متن کاملMicrosecond infrared beam bending in photorefractive iron doped indium phosphide
A time resolved study of the behavior of a single beam in photorefractive iron doped indium phosphide is provided down to the microsecond range, showing that infrared beam bending does occur on the micro-second time scale for moderate beam intensities. Two distinct time scales are evidenced, the behavior of which are the sign of two different photorefractive mechanisms.
متن کاملApplication of the point-defect analysis technique to zinc doping of MOCVD indium phosphide
Epitaxial layers of p-type indium phosphide (InP) have been grown by low pressure, metal organic chemical vapour deposition (LP-MOCVD) using diethylzinc (DEZn) as the p-dopant source. Proposed zinc-associated InP point defects and experimental DEZn doping data were used to formulate a point-defect equilibrium model of the Zn doping process of MOCVD InP. The model equation is contrasted with the...
متن کاملSubpicosecond electrical pulse generation by edge illumination of silicon and indium phosphide photoconductive switches
Using a femtosecond pulsed laser, ultrafast electrical pulses were optoelectronically generated on silicon and indium phosphide by edge illumination of a coplanar transmission line. Backing up theory with experiment, we demonstrate that this pulse-generation method is material independent, thus providing a powerful tool for broadband characterization of devices made on a wide range of semicondu...
متن کاملEpi-n-IZO thin films/Æ1 0 0æ Si, GaAs and InP by L-MBE––a novel feasibility study for SIS type solar cells
High quality epitaxial indium zinc oxide (heavily indium oxide doped) (epi-n-IZO) thin films were optimized by laser-molecular beam epitaxy (L-MBE) i.e., pulsed laser deposition (PLD) technique for fabricating novel isoand hetero-semiconductor–insulator–semiconductor (SIS) type solar cells using Johnson Matthey ‘‘specpure’’grade 90% In2O3 mixed 10% ZnO (as commercial indium tin oxide (ITO) comp...
متن کامل